Growth of Si0.75Ge0.25 alloy nanowires in a separated H-field by microwave processing

Dube, Charu Lata; Kashyap, Subhash C.; Dube, D. C.; Agarwal, D. K.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213107
Academic Journal
This paper presents a rapid and novel technique of growing nanowires of Si0.75Ge0.25 alloy at 900 °C in less than 10 min by processing the constituents in a TE011 single mode cylindrical resonant cavity, operated at 2.45 GHz and ∼300 W. The microstructural, crystal structural, and x-ray photoelectron spectroscopic studies of the nanowires have been carried out to establish their dimensions, crystallographic structure, and composition, respectively. It is proposed that the growth of nanowires is due to electromagnetic field assisted morphological transformation.


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