Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

Lee, H.-J.; Helgren, E.; Hellman, F.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p212106
Academic Journal
Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65×1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.


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