Spin polarized tunneling magnetoresistance in the self-doped manganite La0.9MnO3

Patra, M.; Roy, A.; De, K.; Majumdar, S.; Giri, S.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p212107
Academic Journal
We observe the tunneling magnetoresistance (TMR) at low temperature (T) and low field attributed to the self-doping in polycrystalline La0.9MnO3. The occurrence of TMR is suggested due to the tunneling through the grain boundary (GB) region. Tunneling component of the magnetoresistance ascribed to the disordered magnetic GB region follows the Curie–Weiss-like T dependence. The nonlinear current-voltage curves at low T indicate that the inelastic tunneling via localized states involved with the GB effect is dominant where at low temperature the number of inelastic channels and the fraction of charge carriers entering in each inelastic channel change with temperature.


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