Dual luminescence from organic/inorganic hybrid p-n junction light-emitting diodes

Na, Jong H.; Kitamura, M.; Arita, M.; Arakawa, Y.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213302
Academic Journal
We fabricated a hybrid p-n junction structure using n-type InGaN/GaN multiple quantum wells (MQWs) and p-type N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD). The hybrid structure shows a good current rectifying characteristic similar with conventional p-n junction diodes. Electroluminescence (EL) of the hybrid device exhibits two emission bands originated from InGaN/GaN MQWs, as well as α-NPD layer. The EL properties can be explained by either (or both) electron-hole charge transport between the components or (and) efficient energy transfer via Föster mechanism. The device characteristics could be applicable to various multicolor light-emitting diodes by constructing other organic/inorganic hybrid junctions.


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