TITLE

Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers

AUTHOR(S)
Shin, J. C.; D'Souza, M.; Liu, Z.; Kirch, J.; Mawst, L. J.; Botez, D.; Vurgaftman, I.; Meyer, J. R.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
4.8 μm emitting, quantum cascade (QC) lasers that suppress carrier leakage out of their active regions to the continuum have been realized by using deep (in energy) quantum wells in the active regions, tall barriers in and around the active regions, and tapered conduction-band-edge relaxation regions. The characteristic temperature coefficients T0 and T1 for the threshold current density Jth and slope efficiency, respectively, reach values of 238 K over the 20–60 °C temperature range, which means that Jth and the slope efficiency vary with temperature half as fast as those of conventional QC lasers. In turn, significantly improved continuous wave performance is expected.
ACCESSION #
40125757

 

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