TITLE

Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

AUTHOR(S)
Osmond, J.; Isella, G.; Chrastina, D.; Kaufmann, R.; Acciarri, M.; von Känel, H.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of Js=4.1×10-5 A/cm2 and external quantum efficiency at 1550 nm of η=32% were measured.
ACCESSION #
40125750

 

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