Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

Osmond, J.; Isella, G.; Chrastina, D.; Kaufmann, R.; Acciarri, M.; von Känel, H.
May 2009
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201106
Academic Journal
Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of Js=4.1×10-5 A/cm2 and external quantum efficiency at 1550 nm of η=32% were measured.


Related Articles

  • Fabrication and properties of polycrystalline-SiC/Si structures for Si heterojunction devices. Chaudhry, M.I.; Wright, R.L. // Applied Physics Letters;7/1/1991, Vol. 59 Issue 1, p51 

    Examines the properties of polycrystalline silicon carbide/silicon (SiC) heterojunction diodes fabricated by chemical vapor deposition. Evidence for rectification with low leakage current; Process for increasing the quantum and conversion efficiency of the diodes; Comparison between the band...

  • Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition. Mazzola, Michael S.; Saddow, Stephen E. // Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2730 

    Observes D-center in 6 hexagonal-silicon carbide p-n diodes grown by chemical vapor deposition (CVD). Importance of electrically active deep levels in electronic-grade silicon carbide materials for optoelectronic devices; Preparation of electrical characterization; Concentration of the carbon...

  • AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition. Senda, S.; Jiang, H.; Egawa, T. // Applied Physics Letters;5/19/2008, Vol. 92 Issue 20, p203507 

    AlInN, one of the III-nitride semiconductors, is expected to find its application as transistors, sensors, light emitters of electronic, and optoelectronic devices. When the lattice alignment of AlInN is made similar to GaN, a great deal of crack-free AlInN film growth is possible on GaN layers....

  • Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes. Ciancaglioni, I.; Di Venanzio, C.; Marinelli, Marco; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Angelone, M.; Pillon, M.; Tartoni, N. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p054513 

    X-ray and UV photovoltaic Schottky photodiodes based on single crystal diamond were recently developed at Rome 'Tor Vergata' University laboratories. In this work, different rectifying metallic contact materials were thermally evaporated on the oxidized surface of intrinsic single crystal...

  • Ge on Si p-i-n photodiodes operating at 10 Gbit/s. Colace, Lorenzo; Balbi, Michele; Masini, Gianlorenzo; Assanto, Gaetano; Hsin-Chiao Luan; Kimerling, Lionel C. // Applied Physics Letters;3/6/2006, Vol. 88 Issue 10, p101111 

    We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 °C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate...

  • Metalorganic chemical vapor deposition InGaAs p-i-n photodiodes with extremely low dark current. Gallant, M.; Puetz, N.; Zemel, A.; Shepherd, F. R. // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p733 

    Planar, Zn-diffused InP/InGaAs p-i-n photodiodes, which have been fabricated from material grown by metalorganic chemical vapor deposition, have been shown to exhibit extremely low dark current. The typical dark current measured for 100-μm-diam devices was 10 pA at -10 V bias, with some...

  • Low-temperature (77-300 K) current-voltage characteristics of 4 H-SiC p- p- n diodes: Effect of impurity breakdown in the p-type base. Ivanov, P.; Potapov, A.; Samsonova, T. // Semiconductors;Apr2012, Vol. 46 Issue 4, p532 

    The effect of impurity breakdown on the low-temperature (77-300 K) current-voltage ( I-V) characteristics of 4 H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p- p- n 4 H-SiC structures. A high electric...

  • Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp. Kumata, Ken; Itoh, Uichi; Toyoshima, Yasutake; Tanaka, Naoki; Anzai, Hiroyuki; Matsuda, Akihisa // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1380 

    The photolysis of disilane (Si2H6) and trisilane (Si3H8) under direct excitation by light from a low pressure mercury lamp was carried out to prepare hydrogenated amorphous silicon films (a-Si:H). The electronic and optical properties of the films were investigated as functions of preparation...

  • Structure and Properties of a-Si:H Films Grown by Cyclic Deposition. Afanas�ev, V. P.; Gudovskikh, A. S.; Kon�kov, O. I.; Kazanin, M. M.; Kougiya, K. V.; Sazanov, A. P.; Trapeznikova, I. N.; Terukov, E. I. // Semiconductors;Apr2000, Vol. 34 Issue 4, p477 

    Amorphous hydrogenated silicon films obtained by cyclic deposition with intermediate annealing in hydrogen plasma were studied, a-Si:H films deposited under optimal conditions are photosensitive (photoconductivity to dark conductivity ratio s[sub ph]/s[sub d] is as high as 10[sup 7] under 20 mW...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics