TITLE

Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode

AUTHOR(S)
Banerjee, Koushik; Ghosh, Siddhartha; Mallick, Shubhrangshu; Plis, Elena; Krishna, Sanjay; Grein, Christoph
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Midwavelength infrared InAs–GaSb strained layer superlattice n+-n--p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of ∼6.3 μm are fabricated and characterized. Maximum multiplication gain of 105 is measured at -3.6 V at 77 K. Measured excess noise factors are significantly improved compared to unity hole to electron ionization ratio and corresponds to a theoretical value between 40 and 50 when compared with the McIntyre model. Exponential nature of the gain as a function of reverse bias along with low excess noise factors confirms single carrier hole dominated impact ionization.
ACCESSION #
40125749

 

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