Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode

Banerjee, Koushik; Ghosh, Siddhartha; Mallick, Shubhrangshu; Plis, Elena; Krishna, Sanjay; Grein, Christoph
May 2009
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201107
Academic Journal
Midwavelength infrared InAs–GaSb strained layer superlattice n+-n--p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of ∼6.3 μm are fabricated and characterized. Maximum multiplication gain of 105 is measured at -3.6 V at 77 K. Measured excess noise factors are significantly improved compared to unity hole to electron ionization ratio and corresponds to a theoretical value between 40 and 50 when compared with the McIntyre model. Exponential nature of the gain as a function of reverse bias along with low excess noise factors confirms single carrier hole dominated impact ionization.


Related Articles

  • Numerical simulation of impact ionization in Ge/AlxGa1-xAs avalanche photodiode. Chia, C. K. // Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073501 

    Impact ionization in Ge/AlxGa1-xAs p-i-n heterostructures has been studied using the Monte Carlo technique. The thin (<300 nm) Ge/AlxGa1-xAs single heterojunction structure was found to exhibit large hole (β) to electron (α) ionization coefficient ratio, owing to a higher β in the Ge...

  • Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes. Derelle, S.; Bernhardt, S.; Haidar, R.; Deschamps, J.; Primot, J.; Rothman, J.; Rommeluere, S.; Guérineau, N. // Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1628 

    We evaluated the performance of long-wavelength infrared (LWIR, λc = 9.0 μm at 80 K) mercury cadmium telluride electron-injected avalanche photodiodes (e-APDs) in terms of gain, excess noise factor, and dark current, and also spectral and spatial response at zero bias. We found an...

  • Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates. El-Rub, K. Abu; Grein, C. H.; Flatte, M. E.; Ehrenreich, H. // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3771 

    We study the effects of the electronic band structure on the hole- and electron-initiated impact ionization in Sb-based superlattice avalanche photodiodes. Earlier calculations have revealed that bulk alloy A1GaSb avalanche photodiodes with alloy composition near the resonance between the energy...

  • Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes. McClintock, R.; Pau, J. L.; Minder, K.; Bayram, C.; Kung, P.; Razeghi, M. // Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p141112 

    Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73 MV/cm was estimated from the variation of the breakdown voltage with thickness. From the device response under...

  • A Theoretical Model for the HgCdTe Electron Avalanche Photodiode. KINCH, MICHAEL A. // Journal of Electronic Materials;Sep2008, Vol. 37 Issue 9, p1453 

    A ballistic model is presented for electron avalanche multiplication in the conduction band of HgCdTe, based upon the concept of an optical phonon limited mean free path for the electron, λe. The model predicts avalanche gain as a function of applied bias voltage V, and a threshold voltage...

  • Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes. Perrais, Gwladys; Derelle, Sophie; Mollard, Laurent; Chamonal, Jean-Paul; Destefanis, Gerard; Vincent, Gilbert; Bernhardt, Sylvie; Rothman, Johan // Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1790 

    The impulse response in frontside-illuminated mid-wave infrared HgCdTe electron avalanche photodiodes (APDs) has been measured with localized photoexcitation at varying positions in the depletion layer. Gain measurements have shown an exponential gain, with a maximum value of M = 5000 for the...

  • Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes. Tut, Turgut; Gokkavas, Mutlu; Butun, Bayram; Butun, Serkan; Ulker, Erkin; Ozbay, Ekmel // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p183524 

    The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A...

  • Monte Carlo study of device characteristics of GaN-based avalanche photodiode devices. Zheng, Zhiyuan; Mai, Yuxiang; Wang, Gang // Journal of Applied Physics;Jul2009, Vol. 106 Issue 2, p023716 

    In this article, Monte Carlo method is used to study the characteristics of gallium nitride (GaN). Impact ionization is treated as an additional scattering mechanism, which is described by the Keldysh formula with the parameters determined by fitting the simulated results to the numerical...

  • Impact ionization in AlxGa1-xAsySb1-y avalanche photodiodes. Grzesik, M.; Donnelly, J.; Duerr, E.; Manfra, M.; Diagne, M.; Bailey, R.; Turner, G.; Goodhue, W. // Applied Physics Letters;4/21/2014, Vol. 104 Issue 16, p1 

    Avalanche photodiodes (APDs) have been fabricated in order to determine the impact ionization coefficients of electrons (α) and holes (β) in AlxGa1-xAsySb1-y lattice matched to GaSb for three alloy compositions: (x=0.40, y=0.035), (x=0.55, y=0.045), and (x=0. 65, y=0.054). The impact...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics