TITLE

Resistive switching in nanostructured thin films

AUTHOR(S)
Silva, H.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; de Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G.; Cardoso, S.; Freitas, P. P.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p202107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.
ACCESSION #
40125743

 

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