Resistive switching in nanostructured thin films

Silva, H.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; de Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G.; Cardoso, S.; Freitas, P. P.
May 2009
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p202107
Academic Journal
Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.


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