TITLE

Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices

AUTHOR(S)
Hanke, M.; Schmidbauer, M.; Wang, Zh. M.; Mazur, Yu. I.; Seydmohamadi, Sh.; Salamo, G. J.; Mishima, T. D.; Johnson, M. B.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p203105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact of the GaAs spacer layer thickness on the three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices was investigated by high-resolution x-ray diffraction, cross-sectional transmission electron microscopy, and atomic force microscopy. Dramatic changes in both planar and vertical ordering could be observed. A distinct correlation was found in that the azimuthal angle of inclined vertical inheritance of the dot positions is perpendicular to the planar direction between the dot chains within individual quantum dot layers. These directions are close to [130] or [103].
ACCESSION #
40125735

 

Related Articles

  • One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains. Wang, Zh. M.; Mazur, Yu. I.; Shultz, J. L.; Salamo, G. J.; Mishima, T. D.; Johnson, M. B. // Journal of Applied Physics;2/1/2006, Vol. 99 Issue 3, p033705 

    Long chains of quantum dots formed in InGaAs/GaAs(100) multiple layers have been systematically investigated by scanning electron, transmission electron, and atomic force microscopies. In addition to the usual two-dimensional wetting layer involved in the Stranski-Krastanov growth, we have...

  • Ge out diffusion effect on SiGe nanoring formation. Tu, W.-H.; Huang, S.-H.; Liu, C. W. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p076103 

    Based on atomic force microscopy, high-angle annular dark-field scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and Raman spectroscopy, Ge outdiffusion effects on SiGe quantum dots to form nanorings are studied using the ultrahigh vacuum chemical vapor...

  • The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots. Trevisi, G.; Suárez, I.; Seravalli, L.; Rivas, D.; Frigeri, P.; Muñoz-Matutano, G.; Grillo, V.; Nasi, L.; Martínez-Pastor, J. // Journal of Applied Physics;May2013, Vol. 113 Issue 19, p194306 

    The structural and morphological features of bimodal-sized InAs/(In)GaAs quantum dots with density in the low 109 cm-2 range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and...

  • Elongation of InAs/GaAs quantum dots from magnetophotoluminescence measurements. Krˇápek, V.; Kuldová, K.; Oswald, J.; Hospodková, A.; Hulicius, E.; Humlícˇek, J. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p153108 

    The authors have used magnetophotoluminescence for the determination of the lateral anisotropy of buried quantum dots. While the calculated shifts of the energies of higher radiative transitions in magnetic field are found to be sensitive to the lateral elongation, the shift of the lowest...

  • Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Benaissa, M.; Vennéguès, P.; Tottereau, O.; Nguyen, L.; Semond, F. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231903 

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with...

  • Trends for nanotechnology development in China, Russia, and India. Liu, Xuan; Zhang, Pengzhu; Li, Xin; Chen, Hsinchun; Dang, Yan; Larson, Catherine; Roco, Mihail; Wang, Xianwen // Journal of Nanoparticle Research;Nov2009, Vol. 11 Issue 8, p1845 

    Abstract  China, Russia, and India are playing an increasingly important role in global nanotechnology research and development (R&D). This paper comparatively inspects the paper and patent publications by these three countries in the Thomson Science Citation Index Expanded (SCI)...

  • Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots. Gargallo-Caballero, R.; Guzmán, A.; Ulloa, J. M.; Hierro, A.; Hopkinson, M.; Luna, E.; Trampert, A. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 8, p083530 

    In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional...

  • Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation. Korytov, M.; Budagosky, J. A.; Brault, J.; Huault, T.; Benaissa, M.; Neisius, T.; Rouvière, J.-L.; Vennéguès, P. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 8, p084309 

    The capping of GaN quantum dots (QDs) with an Al0.5Ga0.5N layer is studied using transmission electron microscopy and atomic force microscopy in combination with theoretical calculations. The capping process can be divided into several well-distinguishable stages including a QD shape change and...

  • Characterization of single 1.8-nm Au nanoparticle attachments on AFM tips for single sub-4-nm object pickup. Cheng, Hui-Wen; Chang, Yuan-Chih; Tang, Song-Nien; Yuan, Chi-Tsu; Tang, Jau; Tseng, Fan-Gang // Nanoscale Research Letters;Dec2013, Vol. 8 Issue 1, p1 

    This paper presents a novel method for the attachment of a 1.8-nm Au nanoparticle (Au-NP) to the tip of an atomic force microscopy (AFM) probe through the application of a current-limited bias voltage. The resulting probe is capable of picking up individual objects at the sub-4-nm scale. We also...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics