TITLE

Effect of annealing on the performance of CrO3/ZnO light emitting diodes

AUTHOR(S)
Xi, Y. Y.; Ng, A. M. C.; Hsu, Y. F.; Djurišćic, A. B.; Huang, B. Q.; Ge, L.; Chen, X. Y.; Chan, W. K.; Tam, H. L.; Cheah, K. W.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p203502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.
ACCESSION #
40125731

 

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