Transition into a gapless state and concentration anomalies in the properties of Bi1-xSbx solid solutions

Rogacheva, E. I.; Drozdova, A. A.; Nashchekina, O. N.; Dresselhaus, M. S.; Dresselhaus, G.
May 2009
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p202111
Academic Journal
For Bi1-xSbx solid solutions (x=0.01–0.05), the dependences of the electrical conductivity, Hall coefficient, charge carrier mobility, magnetoresistance, Seebeck coefficient, and microhardness on the Sb concentration have been obtained in the temperature range of 77–300 K. In the isotherms of these properties, distinct extrema or inflection points have been observed in the range of x=0.025–0.035. The presence of these concentration anomalies is attributed to the critical phenomena, which accompany the transition into a gapless state under increasing Sb concentration.


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