TITLE

Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films

AUTHOR(S)
Bartlome, R.; Feltrin, A.; Ballif, C.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The silane dissociation efficiency, or depletion fraction, is an important plasma parameter by means of which the film growth rate and the amorphous-to-microcrystalline silicon transition regime can be monitored in situ. In this letter we implement a homebuilt quantum cascade laser-based absorption spectrometer to measure the silane dissociation efficiency in an industrial plasma-enhanced chemical vapor deposition system. This infrared laser-based diagnostic technique is compact, sensitive, and nonintrusive. Its resolution is good enough to resolve Doppler-broadened rotovibrational absorption lines of silane. The latter feature various absorption strengths, thereby enabling depletion measurements over a wide range of process conditions.
ACCESSION #
40125713

 

Related Articles

  • Production of high-quality amorphous silicon films by evaporative silane surface decomposition. Doyle, J.; Robertson, R.; Lin, G. H.; He, M. Z.; Gallagher, A. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3215 

    Discusses a study that investigated the production of high-quality amorphous silicon films by evaporative silane surface decomposition. Details on the deposition technique; Materials and methods used; Conclusion of the study.

  • Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane. Baert, K.; Symons, J.; Vandervorst, W.; Vanhellemont, J.; Caymax, M.; Poortmans, J.; Nijs, J.; Mertens, R. // Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1922 

    Epitaxial growth of phosphorus-doped silicon deposited at 250 °C from a radio-frequency glow discharge from SiH4 is demonstrated by high-resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si...

  • Highly efficient unibond silicon-on-insulator blazed grating couplers. Ang, T. W.; Ang, T.W.; Reed, G. T.; Reed, G.T.; Vonsovici, A.; Evans, A. G. R.; Evans, A.G.R.; Routley, P. R.; Routley, P.R.; Josey, M. R.; Josey, M.R. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    In this letter, we report, design and fabrication of good asymmetrical Si-blazed gratings with a pitch of 383 nm, fabricated in unibond silicon-on-insulator using angled ion-beam etching. An output efficiency of 84% was achieved. The devices allow efficient coupling to/from small waveguides, of...

  • Laser applications in thin-film photovoltaics. Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C. // Applied Physics B: Lasers & Optics;Aug2010, Vol. 100 Issue 2, p427 

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels...

  • Transmission of positrons with a β[sup +] energy distribution through thin films. Mahony, J.; Friessnegg, T.; Tessaro, G.; Mascher, P.; Puff, W. // Applied Physics A: Materials Science & Processing;1996, Vol. 63 Issue 3, p299 

    The transmission through Al foils of isotropically implanted positrons from a [sup 22] Na β[sup +] source has been measured. It is shown that the transmission is reasonably well-described using an exponential profile once backscattering is accounted for, except for thicknesses below...

  • Electric-field-enhanced photoscission of the Si backbone in organopolysilane films. Shimakawa, K.; Okada, T.; Imagawa, O. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1078 

    Examines the electric-field-enhanced photoscission of the silicon backbone in organopolysilane films. Effects of the prolonged ultraviolet light irradiation of the materials; Reversibility of the changes by annealing near the melting temperature; Causes of the photoscission of the silicon...

  • Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application. Jean, A.; Chaker, M.; Diawara, Y.; Leung, P. K.; Gat, E.; Mercier, P. P.; Pépin, H.; Gujrathi, S.; Ross, G. G.; Kieffer, J. C. // Journal of Applied Physics;10/1/1992, Vol. 72 Issue 7, p3110 

    Presents a study which prepared hydrogenated amorphous a-Si[cubx]C[sub1-x]:H films with various compositions using a radio frequency glow discharge decomposition of a silane and methane mixture diluted in argon. Details on the deposition of the silicon carbide (SiC) film; Characterization of...

  • Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon films. Bisaro, R.; Magariño, J.; Proust, N.; Zellama, K. // Journal of Applied Physics;2/15/1986, Vol. 59 Issue 4, p1167 

    Presents information on a study which examined the structure and crystal growth of undoped and annealed silicon films prepared by chemical vapor deposition and low-pressure chemical vapor deposition of silane. Uses of polycrystalline silicon thin films growth by atmospheric pressure or low...

  • Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2 grid. Badoz, P. A.; Bensahel, D.; Guérin, L.; Puissant, C.; Regolini, J. L. // Applied Physics Letters;6/4/1990, Vol. 56 Issue 23, p2307 

    We report the epitaxial growth of silicon on a tungsten disilicide grating using a rapid thermal processing, low-pressure chemical vapor deposition reactor. Results indicate that silicon grows selectively on the patterned Si/WSi2 structure, irrespective of the grating periodicity (from 0.6 μm...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics