The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Boulle, A.; Aube, J.; Galben-Sandulache, I. G.; Chaussende, D.
May 2009
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201904
Academic Journal
The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the “layer displacement” mechanism (i.e., local diffusional rearrangement of the Si and C atoms). The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to ∼0.05%.


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