Carrier transport in benzodithiophene-dimer field-effect transistors with pentacene crystallinity control layers

Matsumoto, Y.; Takamiya, S.; Kurokawa, A.; Osuga, H.; Uno, K.; Tanaka, Ichiro
May 2009
Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p203305
Academic Journal
The carrier transport in the benzodithiophene (BDT)-dimer films plays significant role for high carrier mobility of BDT-dimer field-effect transistors (FETs) using very thin pentacene layers as crystallinity control layers (CCLs). When the grains of the BDT-dimer films are small, the carrier mobility is not only low but also depends on the average thickness of the pentacene-CCLs. However, it is independent from the thickness of the CCLs when the grain size of the BDT-dimer films is large enough, and becomes as high as 0.76 cm2 V-1 s-1. This result shows that the high carrier mobility of pentacene-CCL/BDT-dimer FETs is due to the carrier transport in the BDT-dimer films.


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