The grain boundary related p-type conductivity in ZnO films prepared by ultrasonic spray pyrolysis

Bin Wang; Jiahua Min; Yue Zhao; Wenbin Sang; Changjun Wang
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p192101
Academic Journal
Intrinsic p-type ZnO thin film was fabricated on sapphire substrate by ultrasonic spray pyrolysis, the p-type ZnO film is achieved using O2 as the carrier gas, with a resistivity of 2.18 Ω cm-1, a carrier concentration of 1.10×1016 cm-3, and a high Hall mobility of 261 cm2/V s. The scanning capacitance microscopy images and annealing the p-type ZnO indicate that the absorbed oxygen in the grain boundary (GB) aroused the p-type conductivity, and the high Hall mobility of the p-type ZnO film own to the quasi-two-dimensional hole gas, which was induced by the negatively charged interface states in the GBs.


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