Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO4+x interface

Shi, J. P.; Zhao, Y. G.; Zhang, H. J.; Tian, H. F.; Zhang, X. P.
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p192103
Academic Journal
The authors report on the temperature dependence of electronic transport property of Ag/La2CuO4+x (LCO) heterostructures with different oxygen contents. Bipolar resistance switching was observed in the sample with larger oxygen content and disappears below 200 K, consistent with the characteristic temperature of oxygen migration in LCO. The resistance relaxation of the low resistance state shows similar behavior as that of oxygen diffusion in LCO and vanishes below 200 K. Analysis of the results strongly indicates that the resistance switching results from the modulation of Schottky barrier by oxygen electromigration at the interface.


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