TITLE

Polarization sensitive silicon photodiodes using nanostructured metallic grids

AUTHOR(S)
Guillaumée, M.; Dunbar, L. A.; Santschi, Ch.; Grenet, E.; Eckert, R.; Martin, O. J. F.; Stanley, R. P.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p193503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semiconductor (CMOS) technology. To design these wire grids, we first analyze the transmission properties of single apertures. From the understanding of a single aperture, we apply a modal expansion method to model wire grids. The most promising grids are fabricated on both a glass substrate and CMOS photodiode. An extinction ratio higher than 200 is measured.
ACCESSION #
39785855

 

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