Improved semipolar [formula] GaN quality using asymmetric lateral epitaxy

de Mierry, P.; Kriouche, N.; Nemoz, M.; Nataf, G.
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p191903
Academic Journal
Semipolar [formula] GaN films were obtained by epitaxial lateral overgrowth from [formula] GaN templates patterned with SiO2 stripes 7 μm wide with 3 μm spacing, oriented along the [1100] GaN in-plane direction. The growth conditions were optimized in order to promote a fast growth rate along the +c [0001] direction. The crystal expands both laterally and vertically until a situation where it overgrows the adjacent crystal, thus stopping the propagation of stacking faults and threading dislocations. The growth anisotropy and filtering of defects is observed by cross-sectional scanning electron microscopy and cathodoluminescence. The lowering of defect density is confirmed by x-ray diffraction measurements. The photoluminescence spectrum of the coalesced epitaxial lateral overgrowth of the (1122) epilayers exhibits a strong band edge emission and a low emission band at 3.41 eV, assigned to the remaining stacking faults.


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