Enhanced photoluminescence of heavily n-doped germanium

El Kurdi, M.; Kociniewski, T.; Ngo, T.-P.; Boulmer, J.; Débarre, D.; Boucaud, P.; Damlencourt, J. F.; Kermarrec, O.; Bensahel, D.
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p191107
Academic Journal
We show that a significant enhancement of the direct band gap photoluminescence can be achieved at room temperature in bulk Ge and Ge-on-insulator heavily n-doped by gas immersion laser doping. The photoluminescence signal from bulk Ge and Ge-on-insulator increases with the donor concentration. An enhancement factor of 20 as compared to the undoped material is achieved near the 1550 nm wavelength for active dopant concentrations around 5×1019 cm-3. These results are supported by calculations of the Ge spontaneous emission spectrum taking into account the doping effect on the electron distribution in the direct and indirect conduction band valleys.


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