TITLE

Enhanced photoluminescence of heavily n-doped germanium

AUTHOR(S)
El Kurdi, M.; Kociniewski, T.; Ngo, T.-P.; Boulmer, J.; Débarre, D.; Boucaud, P.; Damlencourt, J. F.; Kermarrec, O.; Bensahel, D.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p191107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We show that a significant enhancement of the direct band gap photoluminescence can be achieved at room temperature in bulk Ge and Ge-on-insulator heavily n-doped by gas immersion laser doping. The photoluminescence signal from bulk Ge and Ge-on-insulator increases with the donor concentration. An enhancement factor of 20 as compared to the undoped material is achieved near the 1550 nm wavelength for active dopant concentrations around 5×1019 cm-3. These results are supported by calculations of the Ge spontaneous emission spectrum taking into account the doping effect on the electron distribution in the direct and indirect conduction band valleys.
ACCESSION #
39785836

 

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