Indentation-induced low-temperature solid-phase crystallization of Si1-xGex (x=0–1) on insulator

Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p192106
Academic Journal
Indentation-induced solid-phase crystallization (SPC) was proposed to achieve low-temperature growth of Si1-xGex (x=0–1) on insulator. Crystal nucleation was enhanced at the indented positions due to the stress effect, which triggered the lateral SPC. As a result, large Si1-xGex (x=0–1) crystal regions (>2 μm) were achieved on insulator at low temperatures (<590 °C). The growth kinetics for this catalyst metal-free process, i.e., activation energies for nucleation and lateral growth, are presented as a function of the Ge fraction (x).


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