Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Reckinger, Nicolas; Xiaohui Tang; Bayot, Vincent; Yarekha, Dmitri A.; Dubois, Emmanuel; Godey, Sylvie; Wallart, Xavier; Larrieu, Guilhem; Łaszcz, Adam; Ratajczak, Jacek; Jacques, Pascal J.; Raskin, Jean-Pierre
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p191913
Academic Journal
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.


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