Tunable spin junction

Li, Pengke; Dery, Hanan
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p192108
Academic Journal
We present a theory of transport across a double barrier structure at the interface region of a hybrid semiconductor/ferromagnet system (e.g., GaAs/AlGaAs/GaAs/Fe). When electrons flow to the ferromagnet (forward bias), two peaks appear in the current-voltage (I-V) curve of such a structure. The first peak is due to a typical behavior in resonant tunneling diodes and the second peak is due to resonance conditions between localized states. The spin polarization of the current has opposite sign in the two peaks. In such a scheme, the bias controls the magnitude and sign of the spin current.


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