Fully printed silicon field effect transistors

Härting, M.; Zhang, J.; Gamota, D. R.; Britton, D. T.
May 2009
Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p193509
Academic Journal
This letter demonstrates the use of a traditional screen printing approach for the fabrication of silicon field effect transistors. Using purely additive patterning technologies at room temperature conditions, with no additional postprocessing steps, transistors have been produced on paper substrates that have performance characteristics comparable to amorphous silicon thin film transistors. Insulated gate field effect transistors employing n type silicon in the semiconductor layer operate in accumulation mode with effective carrier mobilities in the range 0.3 to 0.7 cm2 (V s)-1.


Related Articles

  • Photosensitive Silicon Bipolar Negative-Differential-Resistance Device with Controlled I–U Characteristic. Kashtankin, I. A.; Gurin, N. T. // Technical Physics Letters;Jul2005, Vol. 31 Issue 7, p558 

    A photosensitive negative-differential-resistance (NDR) device has been developed based on two low-power bipolar silicon transistors on a common substrate, with the emitter junction of one transistor shunted by the conducting channel of the other transistor. As the intensity of IR radiation...

  • Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors. Bescond, M.; Lannoo, M.; Raymond, L.; Michelini, F. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p093703-1 

    This work presents a theoretical study of the influence of a single donor on the transport properties of silicon nanowire transistors. Using a three-dimensional self-consistent nonequilibrium Green's function approach we find that the donor states induce transitions from resonant to antiresonant...

  • Quantum simulation of noise in silicon nanowire transistors. Park, Hong-Hyun; Jin, Seonghoon; Park, Young June; Min, Hong Shick // Journal of Applied Physics;Jul2008, Vol. 104 Issue 2, p023708 

    The noise phenomena of silicon nanowire transistors are investigated through quantum transport simulations. Under the assumption of phase-coherent transport, the scattering approach and the nonequilibrium Green’s function formalism are employed. We present the drain current and noise...

  • Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors. Glushko, A.; Zinchenko, L.; Shakhnov, V. // Journal of Communications Technology & Electronics;Oct2015, Vol. 60 Issue 10, p1134 

    A technique for numerical simulation of variation in the drain current in a silicon-on-insulator field-effect transistor with indirect gate caused by the impact of a heavy charged particle is discussed. The SRIM software and the Synopsys TCAD Sentaurus software suite for process and device...

  • Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors. Shao-Ming Koh; Samudra, Ganesh S.; Yee-Chia Yeo // Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p032111 

    We investigate the carrier transport characteristics in strained n-channel metal-oxide-semiconductor field effect transistors (nFETs) with embedded silicon-carbon (Si:C) source/drain (S/D) stressors formed in close proximity to the channel, taking parasitic resistance into account in the...

  • Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon. Jones, G. M.; Hu, B. H.; Yang, C. H.; Yang, M. J.; Hajdaj, Russell; Hehein, Gerard // Applied Physics Letters;8/14/2006, Vol. 89 Issue 7, p073106 

    The authors demonstrate a silicon-based single-electron transistor (SET) in the few-electron regime. Our structure is similar to a metal-oxide-semiconductor field-effect transistor. The substrate, however, is undoped and could be isotope enriched so that any nonuniformity and spin decoherence...

  • Electrical characterization and hydrogen gas sensing properties of a n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor. Kandasamy, S.; Wlodarski, W.; Holland, A.; Nakagomi, S.; Kokubun, Y. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p064103 

    A new hydrogen gas sensitive n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor (MESFET) is reported. The observed current-voltage curves for the source to drain region indicate that this MESFET operates in enhancement mode. A change in gate potential, due to different ambient...

  • Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys. Eguchi, S.; Chleirigh, C. N.; Olubuyide, O. O.; Hoyt, J. L. // Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p368 

    The germanium-concentration dependence of arsenic diffusion in relaxed silicon germanium (Si[sub 1-x]Ge[sub x]) alloys with Ge content ranging from 0 to 40% has been investigated. Arsenic was implanted into relaxed epitaxial layers at 15 keV to a dose of 3×10[sup 15] cm[sup -2], and...

  • Suppression of 1/f Noise in Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces. Cheng, W.; Tye, C.; Gaubert, P.; Teramoto, A.; Sugawa, S.; Ohmi, T. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p337 

    In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(100) and (110) surfaces, has been carried out. We focus on the Accumulation-mode (AM) FD-SOI device structure and demonstrate that the 1/f noise levels in this AM FD-SOI MOSFETs...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics