TITLE

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

AUTHOR(S)
Lin, C. H.; Lin, H. S.; Huang, C. C.; Su, S. K.; Lin, S. D.; Sun, K. W.; Lee, C. P.; Liu, Y. K.; Yang, M. D.; Shen, J. L.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p183101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.
ACCESSION #
39354769

 

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