Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

Oshima, Yasuhiro; Shandalov, Michael; Sun, Yun; Pianetta, Piero; McIntyre, Paul C.
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p183102
Academic Journal
The chemical state of Ge in HfO2/GeOxNy/Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density (Dit∼3×1011 cm-2 eV-1) and a small capacitance equivalent oxide thickness (CET) of ∼1.35 nm by nitridation of Ge (100) and atomic layer deposition of HfO2. The nitrogen content of the GeOxNy affects both the crystalline structure of the overlying HfO2 and Ge diffusion into the HfO2. Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher-k HfO2 phase, consistent with CET reduction.


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