Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots

Sustersic, N.; Nataraj, L.; Weiland, C.; Coppinger, M.; Shaleev, M. V.; Novikov, A. V.; Opila, R.; Cloutier, S. G.; Kolodzey, J.
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p183103
Academic Journal
The doping of Ge quantum dots grown on Si (100) was investigated using atomic force microscopy and photoluminescence spectroscopy. The dots produced photoluminescence in the energy range from 0.75 to 0.95 eV. Compared to the undoped dots, the boron and phosphorus doped dots demonstrated a shift in peak emission toward lower energy by 60–80 meV, which is attributed to the decrease in density of the smaller sized dots. Increased photoluminescence intensity with temperature indicated higher activation energy with doping, suggesting a higher probability of radiative transitions at elevated temperatures, potentially important for various applications.


Related Articles

  • Single-dot spectroscopy of boron and phosphorus codoped silicon quantum dots. Takashi Kanno; Hiroshi Sugimoto; Fucikova, Anna; Valenta, Jan; Minoru Fujii // Journal of Applied Physics;2016, Vol. 120 Issue 16, p164307-1 

    Boron (B) and phosphorous (P) codoped silicon quantum dots (Si QDs) are dispersible in polar solvents without organic ligands, and exhibit size controllable photoluminescence (PL) from 0.85 to 1.85 eV due to the electronic transitions between the donor and the acceptor states. We study the PL...

  • Formation of carbon-induced germanium dots. Schmidt, O.G.; Lange, C. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2340 

    Examines the formation of carbon-induced germanium (Ge) dots. Use of 0.2 monolayers of pre-grown carbon as nucleation centers; Details on the areal density of Ge islands; Observation of intense photoluminescence signal from small Ge quantum dots; Mechanisms of radiative recombination between...

  • The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots. Sibirev, N. V.; Talalaev, V. G.; Tonkikh, A. A.; Cirlin, G. E.; Dubrovskiĭ, V. G.; Zakharov, N. D.; Werner, P. // Semiconductors;Feb2006, Vol. 40 Issue 2, p224 

    The energy band diagram of the multilayered Ge0.8Si0.2/Ge0.1Si0.9 heterostructures with vertically correlated quantum dots is analyzed theoretically. With regard to fluctuations of the thickness layer in the columns of quantum dots and to the exciton-phonon coupling, it is shown that the...

  • Stepwise Dependence of the Photoconductivity of Si/Ge Structures with Quantum Dots on the Interband Illumination Intensity. Shega&icaron;, O.A.; Markov, V.A.; Nikiforov, A.I. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p74 

    It was found that a stepwise increase in the interband light intensity causes an increase in the low-temperature lateral photoconductivity of a Si/Ge structure containing six layers of germanium quantum dots in a silicon host. As was previously observed in structures with a single layer of...

  • Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer. Hongbin Yang; Zhensheng Tao; Jianhui Lin; Fang Lu; Zuimin Jiang; Zhenyang Zhong // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p111907 

    The temperature and the power dependent photoluminescence (PL) of two types of Ge quantum dots (QDs) (small hut cluster and large dome) coincidentally grown on a strained Si0.7Ge0.3 buffer layer were systematically studied. Two PL peaks from the two types of QDs are demonstrated and show...

  • Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates. Dais, C.; Mussler, G.; Sigg, H.; Müller, E.; Solak, H. H.; Grützmacher, D. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p122405-1 

    SiGe quantum dots are proposed as building blocks for future Si device technology. However, in order to exploit the full potential of SiGe islands, it is necessary to control their positioning and size on a nanometer length. This is achieved by templated self-assembly, which combines substrate...

  • Ultrafast third order nonlinear optical response of donor and acceptor codoped and compensated silicon quantum dots. Imakita, Kenji; Ito, Masahiko; Naruiwa, Ryo; Fujii, Minoru; Hayashi, Shinji // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p041112 

    Nonlinear optical responses of phosphorus and boron codoped and compensated silicon quantum dots (Si-QDs) embedded in borophosphosilicate glass were studied by a z-scan and an optical Kerr gate methods under femtosecond excitation at 780 nm. The nonlinear refractive index (n2) and the two photon...

  • Photoluminescence of Germanium Quantum Dots Grown in Silicon on a SiO2 Submonolayer. Shamirzaev, T. S.; Seksenbaev, M. S.; Zhuravlev, K. S.; Nikiforov, A. I.; U'yanov, V. V.; Pchelyakov, O. P. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p82 

    The photoluminescence of quantum dots in Si/Ge/SiO2/Si and Si/Ge/Si structures is investigated as a function of temperature. The low activation energies for the temperature quenching of photoluminescence of germanium quantum dots in both structures are explained in terms of the thermally...

  • Photoluminescence of germanium quantum dots formed by pulsed laser ablation. Kaganovich, É. B.; Manoilov, É. G.; Begun, E. V. // Semiconductors;Feb2007, Vol. 41 Issue 2, p172 

    Time-resolved studies of photoluminescence in the energy range 1.4–3.2 eV are carried out for GeOx films ( x ≤ 2) containing Ge nanoclusters. The relaxation times vary in the range from 50 ns to 20 μs. The films are produced by single-stage pulsed laser ablation and deposited...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics