Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

Bhattacharyya, A.; Moustakas, T. D.; Lin Zhou; Smith, David. J.; Hug, W.
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p181907
Academic Journal
We report the development of Al0.7Ga0.3N/AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm (III/V∼1) to 250 nm (III/V>1) with internal quantum efficiency varying from 5% to 50%, respectively. To account for these results, a growth model was proposed in which at III/V∼1 the growth proceeds via vapor phase epitaxy, while at III/V>1 the growth proceeds via liquid phase epitaxy.


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