Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Ando, Y.; Hamaya, K.; Kasahara, K.; Kishi, Y.; Ueda, K.; Sawano, K.; Sadoh, T.; Miyao, M.
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182105
Academic Journal
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-doped n+-Si layer (∼1019 cm-3) near the interface between a ferromagnetic Fe3Si contact and a Si channel (∼1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.


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