Low temperature thermal transport in partially perforated silicon nitride membranes

Yefremenko, V.; Wang, G.; Novosad, V.; Datesman, A.; Pearson, J.; Divan, R.; Chang, C. L.; Downes, T. P.; McMahon, J. J.; Bleem, L. E.; Crites, A. T.; Meyer, S. S.; Carlstrom, J. E.
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p183504
Academic Journal
The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 μm thick and 6 mm2 in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.


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