Roles of the bias fields in the exchange interaction between the electron and hole spins in quantum wells

Miah, M. Idrish
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182106
Academic Journal
We study the electric-field effects on the spin polarization (P) in dependence of the strength and orientation of the magnetic field in GaAs quantum wells by photoluminescence measurements. The P in a transverse magnetic field is found to oscillate. The transverse electron and heavy-hole g-factors are estimated from the dependences of the oscillation frequency on magnetic field and applied bias. Measurements with the angular variations in the magnetic field show that both the oscillation frequency and decay rate are increased with increasing the angle from the transverse direction. It is, however, shown that the application of the bias to the quantum wells weakens the exchange interaction between the electron and hole spins.


Related Articles

  • Coexistence of nearly free and strongly bound trions from magneto-photoluminescence of two-dimensional quantum structures with tunable electron or hole concentration. Jadczak, J.; Bryja, L.; Misiewicz, J.; Wójs, A.; Potemski, M.; Liu, F.; Yakovlev, D. R.; Bayer, M.; Reuter, D.; Wieck, A.; Nicoll, C. A.; Farrer, I. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p510 

    We report on polarization-resolved photoluminescence studies of diverse excitonic complexes formed in GaAs quantum wells with a high-mobility two-dimensional hole gas in magnetic fields up to 23 T. Using two-beam illumination we decrease the hole concentration beyond the point of conversion from...

  • Circular polarization of the photoluminescence from a system of two-dimensional A centers in a magnetic field. Petrov, P.; Ivánov, Yu.; Averkiev, N. // Semiconductors;Jun2011, Vol. 45 Issue 6, p776 

    series of GaAs/AlGaAs quantum well structures with different concentrations of A centers is studied experimentally by polarized photoluminescence spectroscopy. The spectral dependences of the circular polarization and the energy shifts in a magnetic field exhibit qualitatively different behavior...

  • Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells. Petrov, P. V.; Ivanov, Yu. L.; Romanov, K. S.; Tonkikh, A. A.; Averkiev, N. S. // Semiconductors;Sep2006, Vol. 40 Issue 9, p1071 

    Magnetic-field-induced circular polarization of the photoluminescence peak related to A(+) centers in quantum wells is measured for the first time. It is shown that, in a magnetic field of 4 T, the polarization degree is as high as 13%, while the peak splitting is virtually absent. A theory...

  • Doping screening of polarization fields in nitride heterostructures. Di Carlo, Aldo; Della Sala, Fabio; Lugli, Paolo; Fiorentini, Vincenzo; Bernardini, Fabio // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is...

  • Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers. Dadgar, A.; Groh, L.; Metzner, S.; Neugebauer, S.; Bläsing, J.; Hempel, T.; Bertram, F.; Christen, J.; Krost, A.; Andreev, Z.; Witzigmann, B. // Applied Physics Letters;2/11/2013, Vol. 102 Issue 6, p062110 

    We report on an over 50% reduction in polarization field strength in c-axis oriented InGaN multi-quantum wells (MQW) by applying quaternary AlGaInN barrier layers with better polarization matching to InGaN than GaN barriers. With the reduction in polarization fields, a strong blue-shift in...

  • Detecting the sign reversal of the g-factor of two-dimensional electrons in narrow GaAs/AlGaAs quantum wells. Solov'ev, V.; Dietsche, W.; Kukushkin, I. // JETP Letters;Feb2015, Vol. 100 Issue 11, p746 

    By means of polarization-resolved photoluminescence spectroscopy, the sign reversal of the z component of the g-factor of two-dimensional electrons in a GaAs/AlGaAs quantum well in a strong perpendicular magnetic field in the vicinity of the filling factor ν= 3 is observed as the well width...

  • Spin Dynamics Controlled by Spin-Dependent Recombination in GaAsN alloys at Room Temperature. Kalevich, V. K.; Ivchenko, E. L.; Shiryaev, A. Yu.; Egorov, A. Yu.; Lombez, L.; Lagarde, D.; Marie, X.; Amand, T. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1309 

    We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs1-xNx alloys with a small nitrogen content (x = 2.1, 2.7, 3.5%). It is found that the photoluminescence (PL) circular polarization...

  • Some remarks on excitation spectra versus photoluminescence spectra for the evaluation of quantum wells. Miller, Robert C.; Bhat, Rajaram // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3647 

    Examines several gallium arsenide/Al[subx]Ga[sub1-x]As single-quantum-well samples via photoluminescence and excitation spectra. Function of the photoluminescence spectrum; Characterization of semiconductor quantum well structures; Comparison between the photoluminescence and excitation...

  • The influence of lateral composition modulation on the photoluminescence of tensile strained InGaAs quantum wells at room temperature. Czaban, J. A.; Thompson, D. A. // Journal of Applied Physics;6/1/2006, Vol. 99 Issue 11, p113109 

    In some cases, it is important to consider the influence that lateral composition modulation has on room temperature photoluminescence spectra. It is shown that for tensile strained InGaAs quantum wells, there is enough composition fluctuation that occurs spontaneously during growth to have an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics