Plasmon-based photosensors comprising a very thin semiconducting region

Le Perchec, J.; Desieres, Y.; de Lamaestre, R. Espiau
May 2009
Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p181104
Academic Journal
We theoretically investigate an elementary subwavelength plasmonic sensor comprising a very thin active region. High quantum efficiency (QE), broad spectral band and nearly no sensitivity to the incidence angle and polarization can be achieved. We particularly discuss different examples based on HgCdTe for infrared detection: QEs of 75% are obtained for active layers λ/(8n) thin, corresponding to a tenfold absorption enhancement.


Related Articles

  • Schottky contact surface-plasmon detector integrated with an asymmetric metal stripe waveguide. Akbari, Ali; Berini, Pierre // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021104 

    A silicon-based Schottky contact photodetector integrated into a finite width asymmetric metal stripe supporting short-range surface plasmon polaritons is presented. Input optical energy is coupled into a bound mode supported by the stripe, leading to total absorption of in-coupled energy. The...

  • Modeling and analysis of photoconductive detectors based on Hg1- x Cd x Te for free space optical communication. Dwivedi, A. D. D.; Chakrabarti, P. // Optical & Quantum Electronics;Jun2007, Vol. 39 Issue 8, p627 

    In this paper we report a theoretical analysis of a long wavelength photoconductive detector for characterizing and optimizing the device in respect of voltage responsivity, quantum efficiency, detectivity and noise equivalent power. The model has been applied to examine the potential of an...

  • New Approaches to Direct Bandgap III-V Materials for LWIR Detector Applications. Sarney, W. L.; Svensson, S. P.; Hier, H.; Donetsky, D.; Wang, D.; Shterengas, L.; Suchalkin, S.; Belenky, G. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p59 

    Infrared (IR) detector materials based on III-V semiconductors are an affordable alternative to HgCdTe, which is the current material of choice for most high performance IR focal plane array systems fielded in the Army. Based on the assumption that III-V compounds do not have an inherently small...

  • Extended spectral response in organic photomultiple photodetectors using multiple near-infrared dopants. Chuang, Shao-Tang; Chien, Shang-Chieh; Chen, Fang-Chung // Applied Physics Letters;1/2/2012, Vol. 100 Issue 1, p013309 

    We demonstrate highly sensitive polymer photodetectors (OPDs) with spectral response extending from the ultraviolet to the near-infrared (NIR) region (∼1200 nm). After doping two NIR dopants, high external quantum efficiencies (∼5500%) and high responsivities (23.0 A/W) are achieved...

  • Electromagnetic modeling of edge coupled quantum well infrared photodetectors. Choi, K. K. // Journal of Applied Physics;Jun2012, Vol. 111 Issue 12, p124507 

    Edge coupling through a 45° facet is the standard approach in characterizing quantum well infrared photodetector materials. From the spectral responsivity, the material absorption coefficient can be deduced from a classical model. However, this classical model has not been closely examined by...

  • Semiconductor snail lasers. Strain, M. J.; Mezősi, G.; Javaloyes, J.; Sorel, M.; Pérez-Serrano, A.; Scirè, A.; Balle, S.; Danckaert, J.; Verschaffelt, G. // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p121105 

    A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and...

  • LWIR plasmonic detector has breakthrough sensitivity and quantum efficiency. Overton, Gail // Laser Focus World;Jul2010, Vol. 46 Issue 7, p22 

    The article reports that researchers in the Bio-inspired Sensors and Optoelectronics Laboratory (BISOL) at Northwestern University in Illinois have developed a long-wavelength infrared (LWIR) photodetector. It notes that the LWIR plasmonic detector has breakthrough for quantum-well surface and...

  • Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers. Su, C. B.; Lanzisera, V. // Applied Physics Letters;1984, Vol. 45 Issue 12, p1302 

    Using the threshold carrier density measurement technique, the differential gain dg/dn at lasing threshold was measured. It was found that the differential gain dg/dn of 1.3-μm InGaAsP lasers is a strong function of the active layer doping level P0. At a doping level of 2.5×1018 cm-3, the...

  • Mid-wave infrared HgCdTe nBn photodetector. Itsuno, Anne M.; Phillips, Jamie D.; Velicu, Silviu // Applied Physics Letters;4/16/2012, Vol. 100 Issue 16, p161102 

    A unipolar, barrier-integrated HgCdTe nBn photodetector with all n-type doping and a type-I band lineup is experimentally demonstrated. Planar mid-wave infrared (MWIR) nBn devices exhibit current-voltage (I-V) characteristics that are consistent with band inversion in reverse bias, indicating a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics