Magnetic tunnel junction sensor with Co/Pt perpendicular anisotropy ferromagnetic layer

Wei, H. X.; Qin, Q. H.; Wen, Z. C.; Han, X. F.; Zhang, X.-G.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p172902
Academic Journal
Linear magnetoresistance is an important attribute for magnetic sensor design in space applications, three-dimensional detection of the magnetic field, and high field measurements. Here we demonstrate that a large linear magnetoresistance of up to 22% can be achieved in a magnetic tunnel junction that consists of two ferromagnetic layers, one with out of plane and one with in-plane magnetic anisotropy. The tunneling magnetoresistance with the electrical current perpendicular to the film plane and the magnetic configuration of the device are analyzed.


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