Electrostatically defined few-electron double quantum dot in silicon

Lim, W. H.; Huebl, H.; Willems van Beveren, L. H.; Rubanov, S.; Spizzirri, P. G.; Angus, S. J.; Clark, R. G.; Dzurak, A. S.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173502
Academic Journal
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the interdot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.


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