TITLE

Improvement of subthreshold swing of n-channel transistor by uniaxial tensile stress due to a quantum mechanical mechanism instead of physical thinning

AUTHOR(S)
Lau, W. S.; Yang, Peizhen; Lai, Seow Wei; Lo, V. L.; Siah, S. Y.; Chan, L.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Physical thinning of the gate dielectric due to uniaxial tensile stress is expected to improve the subthreshold swing (Sts) of both n-channel and p-channel metal-oxide-semiconductor (MOS) transistors. However, experimentally, we observed a small improvement in Sts of n-channel MOS transistors but a small degradation in Sts of p-channel MOS transistors due to the application of uniaxial tensile stress. Uniaxial tensile stress modifies the out-of-plane effective mass of electrons or holes, resulting in a change in Sts, which can be predicted by quantum mechanics.
ACCESSION #
38712354

 

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