Vertically aligned Si intrananowire p-n diodes by large-area epitaxial growth

Kim, Cheol-Joo; Lee, Donghun; Lee, Hyun-Seung; Lee, Geunhee; Kim, Gil-Sung; Jo, Moon-Ho
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173105
Academic Journal
We demonstrate fabrication of vertically aligned, intrananowire p-n diodes by large-area epitaxial growth of Si nanowires (NWs). The axially modulated doping profile of p-n junctions is achieved by in situ doping with alternating addition of dopants in the axial sequence during Au-assisted chemical vapor deposition. We provide direct evidence of the intra-NW p-n junctions using scanning local probes in both individual NWs and vertically aligned NWs at large areas. Our study suggests implication for integrated electronics and optoelectronics based on bottom-up Si NWs.


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