Resonantly enhanced selective photochemical etching of GaN

Trichas, E.; Kayambaki, M.; Iliopoulos, E.; Pelekanos, N. T.; Savvidis, P. G.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173505
Academic Journal
Wavelength dependent photochemical etching of GaN films reveals a strong resonant enhancement of the photocurrent at the GaN gap, in close agreement with the excitonic absorption profile of GaN. The corresponding etching rate of GaN strongly correlates with the measured photocurrent. No photocurrent, nor etching is observed for AlGaN films under same excitation conditions. The method could pave the way to the development of truly selective etching of GaN on AlGaN for the fabrication of nitride based optoelectronic devices.


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