Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 μm

Rudno-Rudziński, W.; Sęk, G.; Ryczko, K.; Syperek, M.; Misiewicz, J.; Semenova, E. S.; Lemaitre, A.; Ramdane, A.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171906
Academic Journal
We present optical studies of quantum dot tunnel injection structures for 1.3 μm emission with an InGaAsN quantum well injector. Photoreflectance spectroscopy supported by effective mass calculations within the band anticrossing model has been used to identify the optical transitions. Based on that, an evidence of the tunneling from the injector well to the dots could be detected by photoluminescence excitation up to the free carrier regime at room temperature. The latter finds confirmation in shortened photoluminescence rise times, when compared to the injector-free quantum dot reference structure.


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