TITLE

The perfect absorber

AUTHOR(S)
Driessen, E. F. C.; de Dood, M. J. A.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that films of very lossy metal or dielectric, with a thickness of only a few nanometers, can absorb almost all incident radiation when illuminated from the substrate side at the critical angle for total internal reflection. The absorption for s-polarized light approaches 100%, while the absorption for p-polarized light vanishes. We demonstrate this effect by measuring the absorption as a function of the angle of incidence at a wavelength of 775 nm in a 4.5 nm thick NbN film with a dielectric constant εNbN=-8.2+31.4i. The measured absorption in this film reaches a maximum of 94%. We discuss the design of a near-unity efficiency single-photon detector for s-polarized light that has a broadband absorption coefficient of >90% for wavelengths from 700 to 1600 nm.
ACCESSION #
38712329

 

Related Articles

  • Preparation of transparent and conductive cellulose nanocrystals/graphene nanoplatelets films. Valentini, L.; Bittolo Bon, S.; Fortunati, E.; Kenny, J. M. // Journal of Materials Science;Feb2014, Vol. 49 Issue 3, p1009 

    The manufacture of emerging products such as photovoltaic devices requires combinations of various novel materials to be leveraged into successful, scalable approach. In order to develop new electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of...

  • GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure. Beyer, A.; Ohlmann, J.; Liebich, S.; Heim, H.; Witte, G.; Stolz, W.; Volz, K. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 8, p083534 

    GaP-layers on Si(001) can serve as pseudo-substrates for a variety of novel optoelectronic devices. The quality of the GaP nucleation layer is a crucial parameter for the performance of such devices. Especially, anti-phase domains (APDs) evolving at mono-atomic steps on the Si-surface can affect...

  • Plasmonic Structure Integrated Single-Photon Detector Configurations to Improve Absorptance and Polarization Contrast. Csete, Mária; Szekeres, Gábor; Szenes, András; Szalai, Anikó; Szabó, Gábor // Sensors (14248220);Feb2015, Vol. 15 Issue 2, p3513 

    Configurations capable of maximizing both the absorption component of system detection efficiency and the achievable polarization contrast were determined for 1550 nm polarized light illumination of different plasmonic structure integrated superconducting nanowire single-photon detectors...

  • Tunable enhanced optical absorption of graphene using plasmonic perfect absorbers. Yijun Cai; Jinfeng Zhu; Qing Huo Liu // Applied Physics Letters;1/26/2015, Vol. 106 Issue 4, p1 

    Enhancement and manipulation of light absorption in graphene is a significant issue for applications of graphene-based optoelectronic devices. In order to achieve this purpose in the visible region, we demonstrate a design of a graphene optical absorber inspired by metal-dielectricmetal...

  • CHARACTERIZATION OF ELECTRODEPOSITED INDIUM DOPED CdSe THIN FILMS. Mahalingam, T.; Mariappan, R.; Dhansekaran, V.; Mohan, S. M.; Ravia, G.; Chu, J. P. // Chalcogenide Letters;Dec2010, Vol. 7 Issue 12, p669 

    Thin films of CdSe and In:CdSe were deposited onto indium doped tin oxide coated conducting glass (ITO) substrates by electrodeposition technique. The appropriate potential region for the formation of stoichiometric CdSe and In-doped CdSe thin films occurs was found to be -700 mV versus SCE. The...

  • Field-controllable exchange bias in epitaxial Fe films grown on GaAs. Choi, Seonghoon; Yoo, Taehee; Khym, S.; Lee, Sanghoon; Liu, X.; Furdyna, J. K. // Applied Physics Letters;9/24/2012, Vol. 101 Issue 13, p132403 

    We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of...

  • Direct writing of graphene patterns on insulating substrates under ambient conditions. Wei Xiong; Yun Shen Zhou; Wen Jia Hou; Li Jia Jiang; Yang Gao; Li Sha Fan; Lan Jiang; Silvain, Jean Francois; Yong Feng Lu // Scientific Reports;5/9/2014, p1 

    To unleash the full potential of graphene in electronics and optoelectronics, high-quality graphene patterns on insulating substrates are required. However, existing methods generally follow a ''synthesis + patterning'' strategy, which are time consuming and costly for fabricating high-quality...

  • Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates. Song, Yuxin; Wang, Shumin; Tångring, Ivar; Lai, Zonghe; Sadeghi, Mahdad // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p123531-1 

    We investigate the effects of doping and grading slope on the surface and structure of linearly alloy graded InGaAs buffers. It is found that the Be doping can improve material properties, resulting in smaller surface roughness and a lower threading dislocation density, while the Si doping has...

  • Optical metasurfaces with robust angular response on flexible substrates. Di Falco, Andrea; Zhao, Yang; Alú, Andrea // Applied Physics Letters;10/17/2011, Vol. 99 Issue 16, p163110 

    We have fabricated optical metasurfaces on flexible substrates that show an optical response independent on the polarization and angles of incidence of light. The realized devices operate as ultrathin selective filters at visible frequencies, with a bandwidth of ∼200 nm, and their response...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics