TITLE

Enhanced UV photoresponse from heterostructured Ag–ZnO nanowires

AUTHOR(S)
Lin, Dandan; Wu, Hui; Zhang, Wei; Li, Heping; Pan, Wei
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p172103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoactive material consisting of heterogeneous Ag–ZnO nanowires (NWs) was prepared by electrospinning. Tunable UV photodetectors fabricated using Ag–ZnO NWs have shown high sensitivity up to over four orders of magnitude with relatively fast and stable response speed. The mechanism for this colossal photoconductivity is elucidated by means of the efficient exciton dissociation under UV illumination due to accelerated electron transfer from conduction band of ZnO to Ag nanoparticles. The facile process proposed here may pave the way for designing sensing and imaging systems.
ACCESSION #
38712323

 

Related Articles

  • Whispering gallery modes in indium oxide hexagonal microcavities. Dong, Hongxing; Chen, Zhanghai; Sun, Liaoxin; Lu, Jian; Xie, Wei; Tan, H. Hoe; Jagadish, Chennupati; Shen, Xuechu // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173115 

    We report on the use of In2O3 nanowires with hexagonal cross section as optical whispering gallery resonators. The single-crystal In2O3 nanowires were fabricated by an in situ thermal oxidation method. Whispering gallery modes (WGMs) in the visible spectral range were directly observed at room...

  • Optoelectronics: Plasmon-enhanced plastic devices. Luther, Joseph M.; Blackburn, Jeffrey L. // Nature Photonics;Sep2013, Vol. 7 Issue 9, p675 

    The article focuses on a study, published in the journal "Nature Photonics," conducted by researcher Hyosung Choi and colleagues related to the field of optoelectronics. In the study, improved polymer photovoltaic devices are developed by incorporating heterostructures consisting of carbon...

  • Tunable photoluminescence and photoconductivity in ZnO one-dimensional nanostructures with a second below-gap beam. Shih, H. Y.; Chen, Y. T.; Huang, N. H.; Wei, C. M.; Chen, Y. F. // Journal of Applied Physics;May2011, Vol. 109 Issue 10, p103523 

    Tunable photoluminescence (PL) and photoconductivity (PC) with a second below-gap beam were demonstrated on ZnO nanorods and nanoribbons. We found that both PL and PC could be quenched as the second beam was applied to the nanostructures, and this behavior was excluded from thermal effect by...

  • Controlled polytypic and twin-plane superlattices in iii–v nanowires. Caroff, Philippe; Dick, Kimberly A.; Johansson, J.; Messing, M. E.; Deppert, K.; Samuelson, L. // Nature Nanotechnology;Jan2009, Vol. 4 Issue 1, p50 

    Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit...

  • Experimental realization of an n-channel double heterostructure optoelectronic switch. Taylor, G. W.; Mand, R. S.; Cho, A. Y.; Simmons, J. G. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1368 

    An n-channel double heterostructure optoelectronic switch has been demonstrated. As in the case of the p-channel device, there is a high impedance state without light emission and a low impedance state with strong spontaneous emission. The states are changed by optical or electrical signals and...

  • Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell. LaPierre, R. R. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014310 

    The continuity and Poisson equations are solved numerically to obtain J-V characteristics and photoconversion efficiency of a two-junction solar cell. The cell consists of a top junction comprised of nanowires with bandgap of 1.7 eV grown on a bottom junction comprised of a Si substrate. The...

  • Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition. Chen, Ruei-San; Wang, Wen-Chun; Chan, Ching-Hsiang; Hsu, Hung-Pin; Tien, Li-Chia; Chen, Yu-Jyun // Nanoscale Research Letters;Dec2013, Vol. 8 Issue 1, p1 

    Photoconductivities of monocrystalline vanadium pentoxide (V 2O 5) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at...

  • Interaction of light with the ZnO surface: Photon induced oxygen "breathing," oxygen vacancies, persistent photoconductivity, and persistent photovoltage. Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan // Journal of Applied Physics;2014, Vol. 115 Issue 3, p1 

    ZnO surfaces adsorb oxygen in the dark and emit CO2 when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO,...

  • Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air. Sanford, N. A.; Robins, L. H.; Blanchard, P. T.; Soria, K.; Klein, B.; Eller, B. S.; Bertness, K. A.; Schlager, J. B.; Sanders, A. W. // Journal of Applied Physics;May2013, Vol. 113 Issue 17, p174306 

    Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility (μ) and density (σs) of negative surface charge for c-axis oriented Si-doped GaN nanowires (NWs). In this approach, we assumed that σs was responsible for the equilibrium...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics