Dielectric properties of KTa0.6Nb0.4O3 thin films on alumina substrates prepared by chemical solution deposition

Glinšek, S.; Malič, B.; Kutnjak, Z.; Wang, H.; Krupka, J.; Kosec, M.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p172905
Academic Journal
Dielectric properties of KTa0.6Nb0.4O3 thin films on polycrystalline alumina substrates prepared by chemical solution deposition were investigated. Dielectric measurements were performed in radio frequency range by patterning planar capacitors on the film surface and in microwave frequency range by split-post dielectric resonator method. The relaxorlike behavior of dielectric properties, which has not been determined in K(Ta, Nb)O3 thin films previously, was unambiguously confirmed by the fit to the Vogel–Fulcher law. The room temperature values of permittivity and dielectric losses, measured at 10 kHz, are 2430 and 0.08, respectively. The corresponding values, measured at 14.5 GHz, are 590 and 0.52.


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