Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles

Reddy, V. S.; Karak, S.; Dhar, A.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173304
Academic Journal
Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles is demonstrated. The effect of middle Al layer thickness and the size of the nanoparticles on device performance are investigated. The high-resolution transmission electron micrographs revealed the formation of core-shell nanoparticles. The device has shown a series of conductance states. These states are nonvolatile in nature and can be accessed by applying proper programming voltage above a threshold voltage. Field-induced transfer of charge carriers between AlQ3 and aluminum core is proposed to be responsible for conductance switching.


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