Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

Chen, Z.; Pei, Y.; Newman, S.; Brown, D.; Chung, R.; Keller, S.; DenBaars, S. P.; Nakamura, S.; Mishra, U. K.
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171117
Academic Journal
Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal space mapping and ω-2θ scans showed that the AlGaN barriers grown on these two buffers had different Al compositions and growth rates, which was attributed to the compositional pulling effect. AlGaN/GaN/AlGaN double heterojunction FETs exhibited lower output conductance and better pinch-off due to the improved electron confinement resulting from the increase in the effective back-side barrier height. Thus, this device is promising for highly scaled transistors. This device also demonstrated a state-of-the-art power added efficiency of 53.5% and an associated power gain of 9.1 dB at a drain bias of 20 V at 30 GHz.


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