Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate

Chang, Wen-Yuan; Liao, Jeng-Hwa; Lo, Yun-Shan; Wu, Tai-Bor
April 2009
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p172107
Academic Journal
The resistive switching characteristics of Pr0.7Ca0.3MnO3 (PCMO) thin films deposited on LaNiO3 (LNO)-electrodized Si substrate were investigated. Highly (100)-textured PCMO films were grown on the (100)-oriented LNO electrode. They exhibited reversible and steady bistable resistance switching behavior. The resistive switching behavior of PCMO capacitors on LNO is related to the trap-controlled space charge limited current mechanism and LNO/PCMO/LNO capacitor exhibits the strongest resistive switching effect with a resistance ratio for about two orders of magnitude.


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