TITLE

Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate

AUTHOR(S)
Chang, Wen-Yuan; Liao, Jeng-Hwa; Lo, Yun-Shan; Wu, Tai-Bor
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p172107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The resistive switching characteristics of Pr0.7Ca0.3MnO3 (PCMO) thin films deposited on LaNiO3 (LNO)-electrodized Si substrate were investigated. Highly (100)-textured PCMO films were grown on the (100)-oriented LNO electrode. They exhibited reversible and steady bistable resistance switching behavior. The resistive switching behavior of PCMO capacitors on LNO is related to the trap-controlled space charge limited current mechanism and LNO/PCMO/LNO capacitor exhibits the strongest resistive switching effect with a resistance ratio for about two orders of magnitude.
ACCESSION #
38712288

 

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