TITLE

A novel method for preparing stoichiometric SnO2 thin films at low temperature

AUTHOR(S)
Ansari, S. G.; Dar, M. A.; Dhage, M. S.; Kim, Young Soon; Ansari, Z. A.; Al-Hajry, A.; Shin, Hyung-Shik
PUB. DATE
April 2009
SOURCE
Review of Scientific Instruments;Apr2009, Vol. 80 Issue 4, p045112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Tin oxide is a well known nonstoichiometric material with dual valency. The invariance of stoichiometry is very intriguing. As of today no report is available for preparing perfect stoichiometric tin oxide. Here we report a novel method to prepare stoichiometric tin oxide by modifying the known plasma enhanced chemical vapor deposition technique using SnCl4-xH2O as precursor and O2 as reactant gas at various temperatures from 300 to 800 °C. Tetragonal rutile structure of SnO2 was found, grown along the [110] direction. X-ray photoelectron spectroscopic measurement showed constant Sn/O ratio. Sn 3d and O 1s were found composed of only Sn4+ (487.2 eV) and O–Sn4+ (531.2 eV) with equal peak widths. Raman band intensity (∼633 cm-1) was found increasing with temperature, indicating the morphological changes. Sheet resistance of ∼0.5 kΩ/□ at 300 °C was measured that reduces to ∼0.1 kΩ/□ at 600 °C. It is found that film stoichiometry remains unaltered, while the structural morphology changes significantly.
ACCESSION #
38611881

 

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