Spin-orbit mixing in III–V semiconductors at the Γ point

Dymnikov, V. D.; Konstantinov, O. V.
April 2009
Physics of the Solid State;Apr2009, Vol. 51 Issue 4, p690
Academic Journal
The consequences of the theory of spin-orbit mixing in III–V semiconductors at the Γ point have been analyzed within the five-band model for the first time. A formula that describes the optical matrix element relating the Γ7 and Γ8 bands and expresses it through the known Luttinger parameter q is derived. Until recently, it was believed that this optical matrix element is equal to zero and that the corresponding transition is forbidden. The role of this transition in the experiment on photon absorption by free holes in the p-GaSb compound is discussed.


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