Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes

Miyajima, Takao; Watanabe, Hideki; Ikeda, Masao; Yokoyama, Hiroyuki
April 2009
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p161103
Academic Journal
Self-pulsations of 407 nm emitting GaN-based blue-violet laser diodes with bisectional (BS) electrodes were demonstrated by applying a reverse bias (VSA) to the subelectrode of the saturable absorber (SA) section. By increasing the injected current to the main electrode of the gain section with a reverse bias of VSA=-12 V, the optical pulses shortened to 30 ps. The optical peak output power was as high as 2.4 W with a pulse width of 30 ps and a repetition frequency of 0.9 GHz. This is so far the shortest pulse width from a self-pulsating BS GaN-based laser diode achieved by applying a reverse bias to the SA section.


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