TITLE

Zinc oxide nanowire networks for macroelectronic devices

AUTHOR(S)
Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p163501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.
ACCESSION #
38225327

 

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