TITLE

Doping and characterization of boron atoms in nanocrystalline silicon particles

AUTHOR(S)
Sato, Keisuke; Fukata, Naoki; Hirakuri, Kenji
PUB. DATE
April 2009
SOURCE
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p161902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Boron (B) doping into nanocrystalline-silicon (nc-Si) particles was achieved by cosputtering of Si chips/B chips/silica disk targets and subsequent annealing at 1100 °C. The average diameter of B-doped particles was less than 4.3 nm, and the content of B was about 14.3 at. %. The observation of EELS spectrum of B-K edge and x-ray photoelectron spectroscopy spectra of B 1s, and that of B local vibrational peaks and the Fano effect by micro-Raman scattering measurements clearly demonstrate that B atoms were doped and electrically activated in the particles, indicating the formation of electrically active p-type nc-Si particles.
ACCESSION #
38225325

 

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