Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Yang, A. L.; Song, H. P.; Wei, H. Y.; Liu, X. L.; Wang, J.; Lv, X. Q.; Jin, P.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G.
April 2009
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p163301
Academic Journal
The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76±0.2 eV and 2.20±0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84±0.2 eV and 0.40±0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the “intrinsic” valence band offset.


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