Ultradense phosphorus in germanium delta-doped layers

Scappucci, G.; Capellini, G.; Lee, W. C. T.; Simmons, M. Y.
April 2009
Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p162106
Academic Journal
Phosphorus (P) in germanium (Ge) δ-doped layers are fabricated in ultrahigh vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultranarrow 2-nm-wide layer with an electrically active sheet carrier concentration of 4×1013 cm-2 at 4.2 K. These results open up the possibility of ultranarrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.


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